PART |
Description |
Maker |
2N5655 2N5656 2N5657 |
Power 1A 350V NPN POWER TRANSISTORS NPN SILICON Plastic NPN Silicon High-Voltage Power Transistor
|
ONSEMI[ON Semiconductor]
|
BUV20D BUV20 BUV60 BUV20-D |
Power 50A 125V NPN TO204 SWITCHMODE Series NPN Silicon Power Transistor SWITCHMODE Series NPN Silicon Power Transistor SITCHMODE Series NPN Silicon Power Transistor
|
ONSEMI[ON Semiconductor]
|
2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|43 3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC] NEC, Corp. NEC Corp.
|
MJ16018 MJW16018 ON1986 |
Power 10A 800V NPN From old datasheet system NPN Silicon Power Transistors POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
MOTOROLA[Motorola, Inc] ON Semiconductor Motorola Mobility Holdings, Inc.
|
2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR From old datasheet system NPN SILICON POWER TRANSISTOR Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 3A条一(c)|26
|
NEC Corp. NEC, Corp.
|
MJ423_D ON1993 MJ423 |
POWER TRANSISTOR NPN SILICON From old datasheet system 10 AMPERE POWER TRANSISTOR NPN SILICON 125 WATTS
|
ONSEMI[ON Semiconductor]
|
FZT1051A |
NPN Low Sat Transistor NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT223 NPN SILICON PLANAR
|
Zetex Semiconductors Diodes Incorporated
|
2SC4892 |
Silicon NPN triple diffusion planar type(For power switching) 1 A, 800 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
2SC4960 2SC4960A |
Silicon NPN triple diffusion planar type(For power switching) 1 A, 900 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE. NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
2N6339 2N6340 |
High-Power NPN Silicon Transistor(25A200W20V(集电极-发射极),硅NPN大功率晶体管) 25 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA High-Power NPN Silicon Transistor(25A00W40V(集电极-发射极),硅NPN大功率晶体管) 25 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|